symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c24a i dm t c = 25 c, note 1 96 a i ar t c = 25 c24a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c f c mounting force 20...120/4.5...27 n/lb weight 6g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.40 ? note 2 single mosfet die features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z temperature and lighting controls advantages z plus 247 tm package for clip or spring mounting z space savings z high power density power mosfet ds99201(8/04) plus 247 tm (ixtx) g d d (tab) g = gate d = drain s = source tab = drain ixtx 24n100 v dss = 1000 v i d25 = 24 a r ds(on) = 0.40 ? ? ? ? ? t rr 250 ns ? 2004 ixys all rights reserved s
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 2 15 22 s c iss 7000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 750 pf c rss 260 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 35 ns t d(off) r g = 1 ? (external), 75 n s t f 21 ns q g(on) 250 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 135 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24 a i sm repetitive; 96 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 600 ns dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixtx 24n100 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 see ixfk24n100/ixfx24n100 data sheet for characteristic curves.
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